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DS: Fachverband Dünne Schichten

DS 9: Ion and Electron Beam Induced Processes

DS 9.4: Vortrag

Montag, 11. März 2013, 17:00–17:15, H8

Temperature- and orientation-dependent damage-formation due to electronic energy deposition in LiNbO₃ — •Matthias Schmidt¹, Jura Rensberg¹, Frank Schrempel², and Werner Wesch¹ — ¹Institute of Solid State Physics, Friedrich Schiller University Jena — ²Institute of Applied Physics, Friedrich Schiller University Jena

Among the methods to realize micro- and nanostructures with high aspect ratio in order to fabricate novel photonic devices in LiNbO₃ crystals, ion beam enhanced etching (IBEE) was found one of the most promising techniques. The high ion energies (several MeV) necessary to achieve sufficiently deep structures (several µm) are accompanied by high electronic energy deposition dominating especially close to the sample surface.
It is well known that the ion fluences to produce damage and to amorphize the material in the electronic energy loss regime are at least an order of magnitude lower compared to the fluences necessary to produce the same damage concentration by means of nuclear energy deposition. In this contribution the damage evolution up to complete amorphization in LiNbO₃ was investigated using MeV oxygen and silicon ions. The transition to the amorphous phase was studied as a function of irradiation temperature and crystal orientation. The differences in damage formation due to nuclear and electronic processes are discussed.