Regensburg 2013 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 10: Graphene: Spin-orbit interaction (HL, jointly with O, TT)

HL 10.3: Vortrag

Montag, 11. März 2013, 12:00–12:15, H17

Intrinsic and substrate induced spin-orbit interaction in chirally stacked trilayer graphene — •Andor Kormanyos and Guido Burkard — University of Konstanz

We present a combined group-theoretical and tight-binding approach to calculate the intrinsic spin-orbit coupling (SOC) in ABC stacked trilayer graphene. We find that compared to monolayer graphene, a larger set of d orbitals (in particular the d_z² orbital) needs to be taken into account. We also consider the intrinsic SOC in bilayer graphene, because the comparison between our tight-binding bilayer results and the density functional computations allows us to estimate the values of the trilayer SOC parameters as well. We also discuss the situation when a substrate or adatoms induce strong SOC in only one of the layers of bilayer or ABC trilayer graphene. Both for the case of intrinsic and externally induced SOC we derive effective Hamiltonians which describe the low-energy spin-orbit physics. We find that at the K point of the Brillouin zone the effect of Bychkov-Rashba type SOC is suppressed in bilayer and ABC trilayer graphene compared to monolayer graphene.

The the combination of group-theoretical and tight-binding approaches can be used to study the spin-orbit interaction in other quasi-two dimensional materials, such as MoS₂, as well.