Regensburg 2013 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 100: Resistive switching (DS, jointly with DF, HL, KR)
HL 100.10: Vortrag
Freitag, 15. März 2013, 12:00–12:15, H32
Nanoscale resistive switching in epitaxial and polycrystalline BiFeO3 thin films — •Yao Shuai1, Wenbo Luo1, Chuangui Wu1, Wanli Zhang1, Oliver G. Schmidt2,3, and Heidemarie Schmidt2 — 1State Key Laboratory of Electronic Thin Films and Integrated Devices, UESTC, China — 2University of Technology Chemnitz, Faculty of Electrical Engineering and Information Technology, 09107 Chemnitz, Germany — 3Institute for Integrative Nanosciences, IFW Dresden, 01069 Dresden, Germany
Nonvolatile [1], bipolar, and multilevel [2] resistive switching has been observed in ca. 500 nm thick polycrystalline BiFeO3 thin films with rectifying, circular Au top electrodes and a nonrectifying Pt bottom electrode. The diameter of the Au top electrodes amounts to ca. 0.5 mm. By scanning a positionable top contact with a diameter of only 10 nm over polycrystalline BiFeO3 thin films under a constant applied dc voltage, the high and low resistance state can be locally written and afterwards read. It has been observed that for thinner polycrystalline BiFeO3 films with a thickness below 300 nm, no resistive switching can be observed either with large or with small scale top contacts. Bipolar resistive switching can also be realized in ca. 50 nm thick epitaxial BiFeO3 films on SrRuO3/SrTiO3 with a positionable top contact. This resistance is mainly determined by the ferroelectric polarization and the barrier height of the top and bottom contact. For thicker epitaxial BiFeO3 films the unique relation between ferroelectric polarization and resistance state is diminished. [1] Y. Shuai et al., J. Appl. Phys. 109 (2011). [2] Y. Shuai et al., IEEE Device Letters (2012) in press.