Regensburg 2013 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 100: Resistive switching (DS, jointly with DF, HL, KR)
HL 100.12: Talk
Friday, March 15, 2013, 12:30–12:45, H32
Lattice dynamics in Sb- and Te-based phase-change materials — •Ronnie Ernst Simon1,2, Ilya Sergueev3, and Raphaël Pierre Hermann1,2 — 1Jülich Centre for Neutron Science JCNS and Peter Grünberg Institut PGI, Jara-FIT Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany — 2Faculté des Sciences, Univer- sité de Liège, B-4000 Liège, Belgium — 3Deutsches Elektronen- Syn- chrotron, D-22607 Hamburg, Germany
Phase-change materials exhibit a significant change of the optical reflectivity and electrical resistivity upon crystallization which renders these materials applicable for optical storage devices and non-volatile electronic memories. In order to understand the switching kinetics between the amorphous and the metastable crystalline states a detailed knowledge of the lattice dynamics of the different phases is crucial. A suitable technique for the investigation of lattice dynamics is nuclear inelastic scattering (NIS) which gives access to the element specific density of phonon states (DPS). We performed NIS measurements in Sb- and Te-based phase-change materials in the amorphous and crystalline phases. We have recently extended the experimental possibilities by demonstrating the feasibility of high pressure NIS measurements, up to 75 GPa, in Sb2Te3 . The ESRF is acknowledged for the provision of synchrotron radiation beamtime at ID18.