Regensburg 2013 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 100: Resistive switching (DS, jointly with DF, HL, KR)

HL 100.1: Talk

Friday, March 15, 2013, 09:30–09:45, H32

Ab initio study of defects in SrTiO₃ bulk and (100) surfaces — •Ali Al-Zubi, Gustav Bihlmayer, and Stefan Blügel — Peter Grünberg Institut (PGI) & Institute for Advanced Simulation (IAS), Forschungszentrum Jülich and JARA, 52425 Jülich, Germany

Oxygen vacancies are believed to play a major role in the conduction mechanisms that enable resistive switching in oxide materials. Employing density functional theory (DFT) and the DFT+U model,we use the full-potential linearized augmented plane wave method as implemented in the FLEUR code to study the formation of point defects in the perovskite SrTiO₃ with varying coordination. We calculated the formation energy of an O-vacancy in both bulk supercells and (100) surface including different, c(2×2) and p(2×2), in-plane unit cells and different terminations. After performing full relaxation, we found that the bulk and SrO-terminated surface have a nonmagnetic, while TiO₂-terminated surface has a ferromagnetic solution. Using the c(2×2) unit cell, the vacancy formation energy was smaller for the bulk than for the SrO- and even TiO₂-terminated surface. On the other hand, the p(2×2) unit cell shows that TiO₂-terminated surface has the lowest formation energy, more than 1 eV lower than the bulk value. Similar comparisons will be presented when including the the DFT+U model that is used to correct the bulk bandgap and improve the localization of the defect states.

We gratefully acknowledge financial support of the DFG, SFB 917 Nanoswitches–A4 project.