Regensburg 2013 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 101: Graphene: Preparation and characterization II (O, jointly with HL, TT)
HL 101.5: Vortrag
Freitag, 15. März 2013, 11:30–11:45, H17
Direct e-beam writing of single-layer graphene nanostructures — •Nils-Eike Weber1, Henning Vieker1, Stefan Wundrack2, Rainer Stosch2, and Andrey Turchanin1 — 1Fakultät für Physik, Universität Bielefeld — 2Physikalisch-Technische Bundesanstalt, Braunschweig
We demonstrate direct writing of single-layer graphene nanostructures employing electron irradiation of aromatic self-assembled monolayers (SAM) and subsequent annealing. The process consists of the following technological steps: (i) formation of an aromatic SAM on a Cu substrate; (ii) electron-beam-irradiation of the SAM resulting in locally cross-linked SAM areas; (iii) conversion of these areas into single-layer graphene via annealing. In this way graphene nanostructures of various architectures are directly defined in the SAM by electron beam lithography reducing several manufacturing steps, which are typically applied for the patterning of two-dimensional sheets including graphene (baking and developing electron-beam resist, plasma etching, resist striping). The formed nanostructures were characterized by Raman spectroscopy, scanning electron and helium ion microscopy. We demonstrate their successful transfer from the original copper foils onto oxidized silicon wafers, where they can directly be integrated into electronic devices.