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HL: Fachverband Halbleiterphysik

HL 102: Quantum dots and wires: Transport

HL 102.6: Vortrag

Freitag, 15. März 2013, 12:30–12:45, H13

Electrical characterization of free-standing GaAs nanowires by multitip STM — •Stefan Korte¹, Vasily Cherepanov¹, Bert Voigtänder¹, Matthias Steidl^2,3, Weihong Zhao^2,3, Peter Kleinschmidt^2,3, Thomas Hannappel^2,3,4, and Werner Prost⁵ — ¹Peter Grünberg Institut (PGI-3), Forschungszentrum Jülich, 52425 Jülich, Germany, and JARA-Fundamentals of Future Information Technology — ²TU Ilmenau, Institut für Physik, Fachgebiet Photovoltaik, D-98684 Ilmenau — ³Helmholtz-Zentrum Berlin, Institut Solare Brennstoffe und Energiespeichermaterialien, D-14109 Berlin — ⁴CiS Forschungsinstitut für Mikrosensorik und Photovoltaik, D-99099 Erfurt — ⁵Center for Semiconductor Technology and Optoelectronics (ZHO), University of Duisburg-Essen, Germany

III-V semiconductor nanowires are promising candidates for future solar cell designs. p-doped GaAs nanowires are grown on an n-doped GaP(111)B substrate by Au-assisted metal-organic vapor-phase epitaxy (MOVPE). For electrical characterization these free-standing nanowires were contacted using a multitip STM. Four point probe measurements reveal their electrical transport properties. The conductance profile along the nanowires and the diode characteristics of the pn-junction to the substrate were measured. Also the elastic mechanical deformation of nanowires and the influence of bending on their resistance has been studied.