Regensburg 2013 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 102: Quantum dots and wires: Transport

HL 102.8: Vortrag

Freitag, 15. März 2013, 13:00–13:15, H13

Optoelectronic properties of individually positioned InAs nanowires — •Jan Overbeck, Andreas Brenneis, Julian Treu, Simon Hertenberger, Gerhard Abstreiter, Gregor Koblmüller, and Alexander Holleitner — Walter Schottky Institut and Physik-Department, TU München, 85748 Garching, Germany

Small bandgap semiconducting nanowires offer a promising approach to fabricating nanoscale light-sensitive devices like broadband solar cells or mid-infrared photodetectors. We discuss the optoelectronic properties of individually positioned InAs nanowires on p-Si(111) substrates. The substrates exhibit a top layer of SiO₂ which is structured via e-beam lithography creating holes in the oxide with a diameter of ∼ 80 nm. The nanowires are then grown vertically on the patterned substrates by solid-source molecular beam epitaxy. To fabricate optoelectronic devices, the nanowires are subsequently contacted via a thin, semitransparent metal film evaporated on top of an insulating layer (BCB). The p-Si substrate forms the second contact of the optoelectronic two-terminal devices. We discuss spatially resolved photocurrent measurements which give insights into the interplay of optoelectronic dynamics in single nanowires and in the Si-substrates.