Regensburg 2013 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 13: Preparation and characterization

HL 13.4: Vortrag

Montag, 11. März 2013, 13:30–13:45, H15

Double-crystal-diffraction measurements of oxygen clusters in single-crystalline silicon — •Christoph Bergmann, Alexander Gröschel, Johannes Will, Matthias Weisser, and Andreas Magerl — Lehrstuhl für Kristallographie und Strukturphysik, Universität Erlangen-Nürnberg, Germany

Semiconductor-grade silicon being close to structural perfection is the basic material for nowadays integrated circuits with structural dimensions reaching the nano-regime. Nevertheless, oxygen clusters which lower the grade of perfection are deliberately introduced as they act as gettering centers for metallic impurities.

Recently, new approaches to the treatment of diffraction data of lattice distortions as arising from clusters were proposed by Molodkin et al. [1]. With this approach it is possible to describe the entire Bragg profile including coherent Bragg scattering and the defect-induced diffuse scattering within a dynamical formalism.

We present X-ray diffraction data obtained with synchrotron and laboratory sources of CZ-Si being distorted by small and medium size clusters (4 nm - 25 nm). By recording the Bragg peaks with a double crystal setup, it is possible to derive information about the oxygen cluster size, density and morphology. The data is compared with TEM measurements.

[1] V. B. Molodkin et al., Phys. Rev. B 78, 224109 (2008)