Regensburg 2013 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 15: Focus Session: Crystalline n-type semiconducting oxides - SnO2, Ga2O3, and In2O3 for novel devices (HL, jointly with O)
HL 15.8: Talk
Monday, March 11, 2013, 18:00–18:15, H2
Printed, high performance inorganic oxide transistors from halide precursors — •Suresh Kumar Garlapati1,2, Nilesha Mishra1, Ramona Hahn1, Simone Dehm1, Robert Kruk1, Subho Dasgupta1, and Horst Hahn1,2,3 — 1Institute for nanotechnology, Karlsruhe institute of technology(KIT) ,Eggenstein, Germany — 2KIT-TUD Joint research laboratory nanomaterials, TU Darmstadt, Darmstadt, Germany — 3Center for functional nanostructures, KIT, Germany
Ink-jet printed field-effect transistors (FETs) are recently of great interest for large area electronics; especially when they exhibit high field-effect mobility. The importance of such devices increases even further when they are operated with very low voltages and compatible to portable electronic applications. However, examples of low voltage driven, high mobility FETs that are scalable for high volume production is scarce in the literature. Here, we report ink-jet printed, halide precursor based extremely high mobility oxide (In2O3) FETs that are gated with composite solid polymer electrolytes to limit the operation voltage to 1 V. The printed precursors have been annealed at different temperatures (573-773 K) and as a result devices have shown little dissimilar performance depending on the degree of crystallization and size of crystallites. Nevertheless, the performance for the lowest temperature annealed devices (573 K) has also been quite outstanding; device mobility close to 50 cm^2V^-1s^-1 and On/Off ratio in excess of 10^5 is noted. The achieved field-effect mobility ensures high semiconductor quality and excellent semiconductor/dielectric interface.