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15:00 |
HL 15.1 |
Topical Talk:
Optical absorption and radiation damage in transparent conducting oxides — •Andre Schleife, Friedhelm Bechstedt, Alfredo Correa, and Yosuke Kanai
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15:30 |
HL 15.2 |
Anisotropic dielectric function and carrier density of rutile SnO2 — •Christian Lidig, Karsten Lange, Martin Feneberg, Maciej Neumann, Norbert Esser, Mark E. White, Min-Ying Tsai, Oliver Bierwagen, James S. Speck, and Rüdiger Goldhahn
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15:45 |
HL 15.3 |
Topical Talk:
Growth from the melt of high-quality In2O3 and Ga2O3 single crystals — •Roberto Fornari, Zbigniew Galazka, Reinhard Uecker, and Klaus Irmscher
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16:15 |
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Coffee break
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16:30 |
HL 15.4 |
Surface structure of metal oxides via Fast Atom Diffraction — •Marco Busch, Eric Meyer, Jan Seifert, Helmut Winter, Klaus Irmscher, Zbigniew Galazka, and Roberto Fornari
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16:45 |
HL 15.5 |
Topical Talk:
Development of gallium oxide power devices — •Masataka Higashiwaki, Kohei Sasaki, Akito Kuramata, Takekazu Masui, and Shigenobu Yamakoshi
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17:15 |
HL 15.6 |
Structural, optical and electrical properties of Si-doped β-β-Ga2O3 thin films — •Stefan Müller, Holger von Wenckstern, Florian Schmidt, Daniel Splith, and Marius Grundmann
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17:30 |
HL 15.7 |
Schottky contacts on β-Ga2O3 thin films grown by pulsed laser deposition — •Daniel Splith, Stefan Müller, Holger von Wenckstern, and Marius Grundmann
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17:45 |
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Coffee break
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18:00 |
HL 15.8 |
Printed, high performance inorganic oxide transistors from halide precursors — •Suresh Kumar Garlapati, Nilesha Mishra, Ramona Hahn, Simone Dehm, Robert Kruk, Subho Dasgupta, and Horst Hahn
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18:15 |
HL 15.9 |
Topical Talk:
Surface electron accumulation layers in oxide semiconductors — •Tim Veal
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18:45 |
HL 15.10 |
Surface and bulk derived in-gap states of In2O3 single crystals — •Dorothee Braun, Valentina Scherer, Christoph Janowitz, Zbigniew Galazka, and Recardo Manzke
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19:00 |
HL 15.11 |
Electron transport in molecular-beam-epitaxy-grown SnO2 and In2O3 films: Doping, defects, and the surface — •Oliver Bierwagen, Natalie Preissler, Takahiro Nagata, Mark E. White, Min-Ying Tsai, and James S. Speck
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19:15 |
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Concluding remarks
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