HL 17: Interfaces and surfaces
Montag, 11. März 2013, 15:00–17:00, H15
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15:00 |
HL 17.1 |
Photoluminescence spectroscopy of singlelayer MoS2 — •Gerd Plechinger, Stefanie Heydrich, Johannes Schmutzler, Jonathan Eroms, Dieter Weiss, Christian Schüller, and Tobias Korn
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15:15 |
HL 17.2 |
Optical properties of single-layer, double-layer, and bulk MoS2 — •Alejandro Molina-Sánchez, Ludger Wirtz, and Kerstin Hummer
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15:30 |
HL 17.3 |
The contribution has been withdrawn.
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15:45 |
HL 17.4 |
Surface characterization of MOVPE prepared Si(111) substrates for III-V nanowire solar cells — •Weihong Zhao, Agnieszka Paszuk, Matthias Steidl, Sebastian Brückner, Anja Dobrich, Johannes Luczak, Peter Kleinschmidt, Henning Döscher, and Thomas Hannappel
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16:00 |
HL 17.5 |
From surface dimers to Si—P bonds at the GaP/Si(100) heterointerface — •Oliver Supplie, Sebastian Brückner, Henning Döscher, Peter Kleinschmidt, and Thomas Hannappel
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16:15 |
HL 17.6 |
Surface characteristics of polar InN layers grown by MOVPE, MBE and migration enhanced afterglow techniques. — •Daria Skuridina, Duc V. Dinh, Rolf Aidam, Michael Kneissl, and Patrick Vogt
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16:30 |
HL 17.7 |
AlGaN/GaN Enzyme-Modified Field-Effect Transistors for Analysis of Enzyme Functionality — •Gesche Mareike Müntze, Wladimir Schäfer, Kai Röth, Alexander Sasse, and Martin Eickhoff
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16:45 |
HL 17.8 |
Silicon surface properties after irradiation with single femtosecond laser pulses under SF6 atmosphere — •Kay-Michael Günther, Hartmut Witte, Jürgen Blaesing, Alois Krost, Thomas Gimpel, Wolfgang Schade, and Stefan Kontermann
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