Regensburg 2013 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 17: Interfaces and surfaces
HL 17.4: Vortrag
Montag, 11. März 2013, 15:45–16:00, H15
Surface characterization of MOVPE prepared Si(111) substrates for III-V nanowire solar cells — •Weihong Zhao1,2, Agnieszka Paszuk1,2, Matthias Steidl1,2, Sebastian Brückner1,2, Anja Dobrich2, Johannes Luczak2, Peter Kleinschmidt1,3, Henning Döscher1,2, and Thomas Hannappel1,2,3 — 1Technische Universität Ilmenau, Institut für Physik, Fachgebiet Photovoltaik, D-98684 Ilmenau — 2Helmholtz-Zentrum Berlin, Institut für Solare Brennstoffe und Energiespeichermaterialien, D14109 Berlin — 3CiS Forschungsinstitut für Mikrosensorik und Photovoltaik, D99099 Erfurt
III-V nanowires grown on Si(111) substrates by metal-organic vapor phase epitaxy (MOVPE) enable a promising new solar cell concept meeting the demands of high-quality-low-cost photovoltaics. GaP buffer layers grown on Si(111) substrates represent suitable quasi-substrates since GaP is almost lattice-matched to Si. Apparently, preparation of atomically flat Si (111) surfaces is an essential step as a precondition for adjacent GaP heteroepitaxy. However, little is known about preparation and surface properties of Si(111) surfaces in MOVPE enviroment. We used in situ RAS to monitor the Si (111) surface during preparation in MOVPE. A contamination-free transfer system enabled us to study the MOVPE prepared surfaces with numerous UHV based surface science tools. A dedicated wet-chemical pretreatment is crucial to obtain atomically flat Si(111) surfaces. It is shown that our preparation in a hydrogen ambient results in a monohydride terminated (1x1)-reconstructed Si(111) surface.