Regensburg 2013 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 18: Lasers and LEDs I

HL 18.1: Talk

Monday, March 11, 2013, 15:00–15:15, H16

Interplay of different degradation mechanisms in short wavelength InGaAlP light emitting diodes in model and experiment — •Cynthia Karl, Jens Ebbecke, Claudia Kauss, Thomas Lutz, and Roland Zeisel — OSRAM Opto Semiconductors, 93055 Regensburg, Germany

The interplay of different degradation mechanisms in short wavelength (Al_xGa_1−x)_0.5In_0.5P LED structures is investigated by overstress experiments. The experimental data are analyzed with regard to the characteristic dependence of each of the concurring degradation mechanisms on the stress and measurement power density. Therefore a multi component defect evolution approach is used describing simultaneous growth and annealing of defects with different characteristic time constants. In combination to this approach the rate equation model for radiative and non-radiative recombination and leakage losses is applied. In such a way access to a further understanding of the origin of the different occurring aging mechanisms is provided, whose superposition can lead to a quite complex overall LED degradation behavior.