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HL: Fachverband Halbleiterphysik

HL 18: Lasers and LEDs I

HL 18.6: Vortrag

Montag, 11. März 2013, 16:15–16:30, H16

High Modal Gain 1.55 μm InAs/InP(100) Based Quantum Dot Lasers with High Wavelength Stability — •Vitalii Sichkovskyi, Vitalii Ivanov, and Johann Peter Reithmaier — Institute of Nanostructure Technologies and Analytics, CINSaT, University of Kassel, Heinrich-Plett-Str. 40, D-34132 Kassel, Germany

Self-organized InAs/InP quantum dot systems are promising candidates for telecommunication applications at 1.55 μm. Based on a novel quantum dot (QD) growth technique, high density dot-like QDs can be grown on (001) InAlGaAs surfaces which results in a strongly improved modal gain per QDs layer. Here we report on the influence of the number of QD layers on static properties of the laser. By reducing the number of QD layers to only three or even two layers, i.e., lowering the modal gain, the wavelength shift with temperature can be reduced. The broad area lasers processed from such laser structure revealed small coefficients of their wavelength variation with temperature, whose values decreased with decreasing the cavity length down to a remarkably low value of 0.07 nm/K, which is 5 times less than for QW lasers. As a proof of high modal gain material, ridge waveguide lasers with only one active InAs QDs layer and cavity lengths of 2025 μm could be operated at room temperature. The threshold current was measured to 130 mA and a total cw output power of 9 mW was obtained. The laser structures with specially optimized design for high-speed telecom applications will be presented and discussed.