Regensburg 2013 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 24: Graphene: Electronic properties and transport (O, jointly with HL, TT)

HL 24.5: Talk

Monday, March 11, 2013, 17:00–17:15, H17

Reversible Photooxidation of Graphene — •Stefan Böttcher, Hendrik Vita, and Karsten Horn — Fritz-Haber Institute of the Max-Planck Society, Berlin, Germany

Graphene oxide is often discussed in the context of a technical usage of graphene in future electronic devices. The necessity to obtain a tunable band gap in possible electronic applications makes graphene oxide a promising covalent modification of graphene. However, the homogeneous preparation of graphene oxide has so far been a challenging task, using mainly an aggressive chemical or complex physical treatment of graphene. Here we present a method to selectively produce graphene oxide from epitaxially grown graphene on transition metal surfaces such as Ir(111). Using NO₂ as an adsorbate we transform graphene into graphene oxide by irradiation with UV light at low temperatures, leading to specific signatures in the core and valence level photoemission and -absorption spectra. The graphene oxide thus prepared is stable up to room temperature, but its formation is thermally completely reversible to graphene at higher temperatures.