Regensburg 2013 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 26: Lasers and LEDs II
HL 26.2: Talk
Monday, March 11, 2013, 17:00–17:15, H16
Power scaling of 2-µm GaSb-based semiconductor disk laser emitting in TEM00 mode — •Steffen Adler, Sebastian Kaspar, Marcel Rattunde, Tino Töpper, Christian Manz, Klaus Köhler, and Joachim Wagner — Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastrasse 72, D-79108 Freiburg, Germany
Semiconductor disk lasers, also known as vertical-external-cavity surface-emitting laser (VECSEL), combine the wavelength versatility of semiconductor laser with the capability of a nearly diffraction-limited high-power output. VECSEL in the 2-3-µm wavelength range are of interest for a broad range of applications in materials processing, medicine, trace gas sensing and optical pumping. In this presentation we will report on power scaling of TEM00-emitting GaSb-based VECSELs, which are excellently suited for applications requiring Watt-level output powers emitted from a single-mode fiber.
Investigating different cavity designs in order to scale the output power in TEM00 mode we prove the existence of a thermal lens in GaSb-based VECSEL. This finding was unlikely to be expected since the up-to-date scientific consensus has been that the influence of thermal lensing in GaSb-based VECSEL is negligible.
The thermal lens in the VECSEL chip is due to pump-power induced heating inducing a valid refractive index variation. Since thermal lensing hampers TEM00 emission at high output power we have investigated different cavity designs minimizing this unwanted effect. Using an optimized setup, we realized a 2.1-µm emitting VECSEL with an output power above 1.5 W at M2 < 1.2 at 20∘C heat-sink temperature.