Regensburg 2013 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 26: Lasers and LEDs II
HL 26.7: Vortrag
Montag, 11. März 2013, 18:15–18:30, H16
Evanescently coupled semiconductor laser arrays fabricated in the InGaAs/GaAs material system — •Alexander Reinhold1, Christian Zimmermann1, Julian Scheuermann1, Michael von Edlinger1, Andreas Heger1, Wolfgang Zeller1, Johannes Koeth1, and Martin Kamp2 — 1nanoplus GmbH, Oberer Krischberg 4, D-97218, Gerbrunn, Germany — 2Technische Physik, Universität Würzburg, Am Hubland,D-97074, Würzburg, Germany
Semiconductor laser diodes are nowadays well established as highly efficient, compact and low cost coherent light sources in various fields of applications. However, the combination of high output power with a good beam quality and narrow spectral linewidth is still challenging. A possible device geometry that can meet these demands is an array of ridge waveguides with lateral gratings in between the ridges. The ridge array leads to a large mode size for the still strongly index guided mode, whereas the grating provides wavelength selection. We have fabricated such devices based on an AlGaAs/GaAs laser structures with a double InGaAs quantum well as active material, emitting in the wavelength range around 890 nm. We achieved spectrally narrow operation around a wavelength of 887 nm with side mode suppression ratios (SMSR) of 33 dB and optical output powers up to 100 mW. The devices operate on a higher order lateral supermode with a multi-lobed farfield. We have also investigated phase matching segments and vertically etched sidewall gratings in order to achieve discrimination of high order lateral supermodes and diffraction limited emission.