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HL: Fachverband Halbleiterphysik

HL 27: Joint Poster Session: Functionalized semiconductor nanowires (DS, jointly with HL); Resistive switching (DS, jointly with DF, KR, HL)

HL 27.5: Poster

Montag, 11. März 2013, 17:00–20:00, Poster B1

Growth of GaAs nanowires using the ANKA portable MBE system — •Jean-Wolfgang Hornung¹, Emmanouil Dimakis², Philipp Schroth¹, Lutz Geelhaar², and Tilo Baumbach¹ — ¹Karlsruhe Institute of Technology, Institute for Photon Science and Synchrotron Radiation, Karlsruhe, Germany — ²Paul-Drude-Institut für Festkörperelektronik, Berlin, Germany

We present results on first growth experiments with the portable Molecular Beam Epitaxy (PMBE) System at ANKA performed at the PDI in Berlin. This system enables the growth of nanostructures in the (In,Ga)As-material system and in-situ monitoring of growth processes using synchrotron radiation at various synchrotron radiation facilities such as ANKA, ESRF, PETRA III. The properties of such NWs are of great importance for the fabrication of high performance electronic devices such as vertical transistors and solar cells.

For future time-resolved XRD-measurements on single NWs, the control of the axial growth rate and number density is very important. We show that by changing the growth parameters (growth temperature, V/III-ratio) we were able to influence these properties. In particular we grew self-catalyzed GaAs-Nanowires (NWs) on Si(111) substrates covered with thin oxide layers of different thicknesses. In-situ the growth process was monitored using RHEED measurements. Ex-situ the samples were characterized by SEM measurements.

We gratefully acknowledge the help of C. Hermann, A.-K. Bluhm and H. - P. Schönherr at PDI, as well as the support by Dr. B. Krause and H.-H. Gräfe at ANKA.