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HL: Fachverband Halbleiterphysik
HL 27: Joint Poster Session: Functionalized semiconductor nanowires (DS, jointly with HL); Resistive switching (DS, jointly with DF, KR, HL)
HL 27.6: Poster
Monday, March 11, 2013, 17:00–20:00, Poster B1
Structural and resistive switching properties of SrTiO3 deposited by RF sputtering — •Benjamin Roessler, Jura Rensberg, Frank Schmidl, and Carsten Ronning — Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, 07743 Jena, Germany
Strontium titanate (SrTiO3) exhibits bipolar resistive switching between a high- and a low-resistance state when applying an appropriate electric field. The possibility to deposit SrTiO3 at room temperature by magnetron sputtering on silicon substrates without buffer layers makes it one of the promising candidates for future nonvolatile data memory application. Therefore, we deposited polycrystalline SrTiO3 on p-Si(100) as well as p-Si(110) at room temperature with a fixed oxygen-to argon content ratio of 1:2. The microstructure as well as the crystalline quality of the films was analyzed using cross-sectional electron microscopy and X-ray diffraction analysis. For both substrates a broad grain size distribution was found for the as-deposited films. To improve the crystalline quality post-deposition annealing was performed up to temperatures of 1000∘C. In this contribution we discuss the structural changes and electrical properties of SrTiO3, i.e. the resistive switching properties as a function of the annealing temperature.