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HL: Fachverband Halbleiterphysik

HL 27: Joint Poster Session: Functionalized semiconductor nanowires (DS, jointly with HL); Resistive switching (DS, jointly with DF, KR, HL)

HL 27.7: Poster

Montag, 11. März 2013, 17:00–20:00, Poster B1

Memory Effects in Resistive Ion-beam Modified Oxides — •S. Gemming^1,2, D. Blaschke^1,2, K. Potzger¹, P. Zahn¹, A. Bogusz², H. Schmidt², T. Mikolajick³, S. Slesazeck³, H. Wylezich³, B. Abendroth⁴, D. C. Meyer⁴, S. Rentrop⁴, R. Dittmann⁵, K. Skaja⁵, R. Waser⁵, J. Rensberg⁶, C. Ronning⁶, N. A. Spaldin⁷, and D. Basov⁸ — ¹HZ Dresden-Rossendorf, D-01314 Dresden — ²TU Chemnitz, D-09107 Chemnitz — ³TU Dresden, D-01062 Dresden — ⁴TU Bergakademie Freiberg, D-09596 Freiberg — ⁵FZ Jülich, D-52425 Jülich — ⁶Friedrich Schiller University Jena, D-07743 Jena — ⁷ETH Zürich, CH-8092 Zürich, Switzerland — ⁸U.C. San Diego, La Jolla CA 92093-0354, U.S.A.

The Virtual Institute ’Memriox’ establishes a joint research initiative in the field of ion-tailored oxide-based memristive elements, to be pursued within a novel and unique combination of core competences from the Helmholtz centers Dresden-Rossendorf and Jülich and their university partners in Dresden, Freiberg, Jena, San Diego, and Zürich. A nanoscale memristive element may prove the concept of the ultimate future non-volatile memory cell with a resistance set directly by electric currents. The Virtual Institute aims at stepping beyond the established layer-by-layer control of intrinsic defects during the synthesis of memristive homojunctions. The project is financed by the Initiative and Networking Funds of the Helmholtz Association (VH-VI-442).