Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

HL: Fachverband Halbleiterphysik

HL 28: Poster Session: Graphen; Transport properties; Transport in high magnetic fields / Quantum Hall effect; Metal-semiconductor hybrid systems

HL 28.15: Poster

Montag, 11. März 2013, 16:00–20:00, Poster A

Generalized Boltzmann equation approach to rectification at a potential step — •Stephan Rojek, Alfred Hucht, and Jürgen König — Theoretische Physik, Universität Duisburg-Essen and CENIDE, 47048 Duisburg, Germany

In a recent experiment[1,2] a density modulated two-dimensional electron gas has been shown to work as a tunable rectifier. Tow top-gates define two regions of different carrier density separated by a potential step. A bias voltage parallel to the potential step leads to a transverse voltage proportional to the square of the applied bias voltage. The experiment could be well explained within a diffusion thermopower model in terms of a Boltzmann equation approach.[2] The latter is based on a local equilibrium distribution function with a spatially dependent effective chemical potential and temperature.

In our current theoretical investigation, we go beyond this diffusion thermopower model and derive a general theory, which, in principal, allows for a systematic calculation of all contributions to a non-equilibrium distribution function.

[1] A. Ganczarczyk, C. Notthoff, M. Geller, A. Lorke, D. Reuter, and A. D. Wieck, AIP Conf. Proc. 1199, 143 (2009).
[2] A. Ganczarczyk, S. Rojek, A. Quindeau, M. Geller, A. Hucht, C. Notthoff, J. König, A. Lorke, D. Reuter, and A. D. Wieck, Phys. Rev. B 86, 085309 (2012).