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HL: Fachverband Halbleiterphysik

HL 28: Poster Session: Graphen; Transport properties; Transport in high magnetic fields / Quantum Hall effect; Metal-semiconductor hybrid systems

HL 28.19: Poster

Montag, 11. März 2013, 16:00–20:00, Poster A

Weak antilocalization and disorder-enhanced electron interactions in crystalline Ge₁Sb₂Te₄ — Nicholas Breznay¹, •Hanno Volker², Alexander Palevski³, Riccardo Mazzarello⁴, Aharon Kapitulnik¹, and Matthias Wuttig^2,5 — ¹Department of Applied Physics, Stanford University, Stanford, CA 94305, USA — ²I. Physikalisches Institut (IA), RWTH Aachen University, 52056 Aachen, Germany — ³School of Physics and Astronomy, Raymond and Beverly Sackler Faculty of Exact Science, Tel-Aviv University, 69978 Tel-Aviv, Israel — ⁴Institut für theoretische Festkörperphysik, RWTH Aachen University, 52056 Aachen, Germany — ⁵JARA FIT, RWTH Aachen

Phase-change materials (PCMs) are characterized by their high optical and electrical contrast between an amorphous and a crystalline phase, the long-term stability of both phases at room temperature and their fast crystallization kinetics[1]. Recently, it has been demonstrated that many PCMs undergo a disorder-induced metal-insulator transition[2].

In the present study[3], we focus on the metallic state, in which disorder-enhanced electron-electron interaction and weak antilocalization caused by strong spin-orbit scattering are observed at low temperatures. Employing well-established theories[4], we are able to consistently fit experimental data and extract the relevant scattering rates.

[1] M. Wuttig and N. Yamada, Nat. Mater. 6, 824 (2007)

[2] T. Siegrist et al., Nat. Mater. 10, 202 (2011)

[3] N.P. Breznay et al., Phys. Rev. B 86, 205302 (2012)

[4] P.A. Lee and V. Ramakrishnan, Rev. Mod. Phys. 57, 287 (1985)