Regensburg 2013 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 28: Poster Session: Graphen; Transport properties; Transport in high magnetic fields / Quantum Hall effect; Metal-semiconductor hybrid systems

HL 28.3: Poster

Monday, March 11, 2013, 16:00–20:00, Poster A

Nano patterning graphene by gas-assisted focused-electron-beam-induced etching — •Jens Sonntag, Benedikt Sommer, Arkadius Ganczarczyk, Martin Geller, and Axel Lorke — Faculty of Physics and CENIDE, Universität Duisburg-Essen

The transport properties of graphene devices vary dramatically with their geometric structure. E.g. confining the charge carries in lateral dimension gives rise to a band gap, which is advantageous for the current ratio between on and off state of a graphene field-effect transistor.
We present a method to pattern graphene by focused-electron-beam-induced-etching (FEBIE) with water vapor as a reactive gas. While the resolution for graphene on SiO₂ is comparable to the widely used electron beam lithography (EBL) followed by reactive ion etching, no organic resist is needed for the FEBIE technique. A resolution of about 15 nm is achieved. More importantly, we are able to cut suspended graphene with an even better resolution of approximately 8 nm. In both cases, the roughness of the edges is at least better than the obtained resolution.
Transport measurements on a 1D conductive channel patterned by FEBIE indicate the expected band gap, showing that the process does not destroy the characteristic electronic properties of graphene. Therefore it is possible to fabricate devices like suspended graphene nanoribbons in a controlled top-down process.