Regensburg 2013 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

HL: Fachverband Halbleiterphysik

HL 29: Poster Session: Spintronics; Spin-controled transport; Topological insulators; Interfaces / Surfaces; Magnetic semiconductors

HL 29.15: Poster

Montag, 11. März 2013, 16:00–20:00, Poster A

Inverse spin Hall effect in p-GaAs nanostructures — •Markus Ehlert¹, Thomas Hupfauer¹, Cheng Song^1,2, Martin Utz¹, Dominique Bougeard¹, and Dieter Weiss¹ — ¹Institute of Experimental and Applied Physics, University of Regensburg, D-93040 Regensburg, Germany — ²Laboratory of Advanced Materials, Department of Material Science & Engineering, Tsinghua University, Beijing 100084, China

We performed experiments with “H-geometry” structures in lightly doped p-GaAs (4×10¹⁶ cm⁻³), which allow for inverse spin Hall effect (ISHE) measurements without using ferromagnetic contacts [1]. A current is driven in the first branch of the “H” to create a spin current via direct spin Hall effect, which then leads to a charge accumulation in the adjacent branch of the “H” due to ISHE. External magnetic field, either in-plane or out-of-plane, is applied to induce spin precession and modulate the resulting signal. From analysis we mainly identify classical transport mechanisms being responsible for detected large ISHE-like signal, as previously reported [2]. A small underlying contribution is presumably related to thermally induced effects, due to the small width of our conduction channels (300 nm), and cannot be unambiguously attributed to ISHE. This work was supported by DFG SPP1285.

[1] E. M. Hankiewicz et al., Phys. Rev. B 70, 241301(R) (2004).

[2] G. Mihajlović et al., Phys. Rev. Lett. 103, 166601 (2009).