Regensburg 2013 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 29: Poster Session: Spintronics; Spin-controled transport; Topological insulators; Interfaces / Surfaces; Magnetic semiconductors
HL 29.16: Poster
Monday, March 11, 2013, 16:00–20:00, Poster A
Modification of spin dynamics in ion-implanted wurtzite semiconductors — •Jago Döntgen1, Jan Heye Buß1, Jörg Rudolph1, Stepan Shvarkov2, Andreas D. Wieck2, and Daniel Hägele1 — 1AG Spektroskopie der kondensierten Materie, Ruhr-Universität Bochum, Germany — 2Angewandte Festkörperphysik, Ruhr-Universität Bochum, Germany
The wide-gap wurtzite semiconductors GaN and ZnO possess high potential for opto-electronics as well as high-frequency and high-power electronics. Their spin-related properties are in the focus of intense research originally motivated by theoretical predictions of ferromagnetism above room-temperature in rare-earth- or transition-metal-doped material [1]. We use time-resolved Kerr-Rotation spectroscopy to investigate electron spin oscillations in a magnetic field after implantation of GaN with Gadolinium and coimplantation with Si. We
find strongly increased spin lifetimes for moderate Gd-implantation doses and a transition to isotropic
spin relaxation from the anisotropic case known from unimplanted GaN [2]. The increased spin lifetimes in combination with the disappearance of anisotropy
is a fingerprint of localized defect-states caused by implantation with Gd. An enhanced alignment of electron spins along the magnetic field by Gd could not be observed.
T. Dietl et al., Science 287, 1019 (2000)
J. H. Buss et al., Appl. Phys. Lett. 95, 192107 (2009)