Regensburg 2013 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 29: Poster Session: Spintronics; Spin-controled transport; Topological insulators; Interfaces / Surfaces; Magnetic semiconductors

HL 29.27: Poster

Montag, 11. März 2013, 16:00–20:00, Poster A

Anomalous Hall effect under the influcence of a metal-insulator transition in Mn doped InAs quantum wells — •Dieter Vogel, Christina Wensauer, Ursula Wurstbauer, Dieter Schuh, Werner Wegscheider, and Dieter Weiss — Institute for Experimental and Applied Physics, University of Regensburg, 93040 Regensburg, Germany

We report on magnetotransport studies in InAs:Mn quantum wells (QW), containing a two dimensional hole gas, which reveal a considerable anomalous Hall effect (AHE) in coexistence with a magnetic field driven insulator-to-metal transition. Earlier experimental and theoretical studies made clear that there are at least three different regimes for the behavior of AHE as a function of σ_xx[1]:(i) high conductivity regime (ii) good-metal regime (iii) bad-metal hoping regime. In our case a transition from σ_xy^(AH) ∝ σ_xx^1.6 for the insulating regime to a good-metal regime, in which σ_xy^(AH) is roughly independent of σ_xx, is observed. The scaling relation in the low-conductivity region is consistent with a recently developed theory of the anomalous Hall effect in the insulation regime [2]. Finally, we discuss the possibility to separate the intrinsic and the extrinsic scattering contribution in the good-metal regime following recent work by [3].
N.Nagaosa et. al., Rev. Mod Phys. 82, 1539 (2010)
X. Liu et. al., Phys. Rev. B 84, 165304 (2011)
A. Shitade and N. Nagaosa, ArXiv ID 1109.5463 (2012)