Regensburg 2013 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 29: Poster Session: Spintronics; Spin-controled transport; Topological insulators; Interfaces / Surfaces; Magnetic semiconductors
HL 29.8: Poster
Monday, March 11, 2013, 16:00–20:00, Poster A
Full cancellation of the Spin-Orbit field in (110) GaAs/AlGaAs Quantum Wells via the application of strain — •Arthur Varkentin1, David English1, Richard Harley2, Jens Hübner1, and Michael Oestreich1 — 1Institute for Solid State Physics, Leibniz University Hannover, Appelstr. 2, 30167 Hannover, Germany — 2School of Physics and Astronomy, University of Southampton, Southampton, SO17 1BJ, UK
We present measurements of the spin relaxation rate Γs in (110) GaAs/AlGaAs quantum wells (QW). QW grown parallel to the (110) axis offer the unique opportunity to completely suppress the usually dominant Dyakonov-Perel (DP) spin relaxation mechanism via the application of strain [1]. The DP mechanism occurs because the electrons sense a momentum dependent spin-orbit field that is randomised due to the thermal motion of the electrons [2]. The bulk contribution to the spin orbit field for (110) QW is aligned along the growth axis z. This results in the suppression of DP for electron spin populations initially aligned parallel to z [3]. The exciting property of (110) QW is that the strain contribution to the spin-orbit field is also aligned parallel to z [1]. The application of strain can potentially cancel all spin-orbit fields and thus completely suppress DP spin relaxation for all orientations of electron spins.
[1] S.-W. Chang & S.-L. Chuang, Phys. Rev. B, 72 (2005).
[2] M. I. Dyakonov & V. I. Perel, Sov. Phys. Sol. St., 13, 3023 (1972).
[3] Y. Ohno et al. & H. Ohno, Phys. Rev. Lett., 83, 4196 (1999).