Regensburg 2013 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 4: III-V semiconductors: mainly wells and surfaces

HL 4.1: Vortrag

Montag, 11. März 2013, 09:30–09:45, H15

Modulating plasmons in two-dimensional hole gas systems by spin-orbit interactions — •Andreas Scholz, Tobias Dollinger, Paul Wenk, Klaus Richter, and John Schliemann — Institute for Theoretical Physics, University of Regensburg, Germany

We study the dynamical dielectric function of a two-dimensional hole gas, exemplified on [001]-GaAs and InAs quantum wells, within the four band Luttinger model including bulk and structure inversion asymmetric terms. The plasmon dispersion shows a pronounced anisotropy for GaAs and InAs based systems. In GaAs this leads to a suppression of plasmons due to Landau damping in some orientations while others are virtually undamped. Due to the large Rashba contribution in InAs based heterostructures, the lifetime of long-wavelength plasmons can be controlled efficiently by changing the electric field. This effect might be useful in plasmon field effect transistors as already proposed for electron gases.