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HL: Fachverband Halbleiterphysik

HL 4: III-V semiconductors: mainly wells and surfaces

HL 4.7: Vortrag

Montag, 11. März 2013, 11:15–11:30, H15

Bandgap modification of GaP and GaAs achieved by N-implantation and ultra-short thermal treatment — •Kun Gao, Slawomir Prucnal, Wolfgang Skorupa, Manfred Helm, and Shengqiang Zhou — Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (HZDR), P.O. Box 510119, 01314 Dresden, Germany

The giant band gap bowing effect observed in III-V dilute nitride alloys is promising for modification of III-V semiconductors to increase their flexibility in virtue of the strong electronegativity and small size of nitrogen atoms.

In this contribution we present the bandgap modification of GaAs and GaP by N-implantation followed by flash lamp annealing (FLA) and pulsed laser melting (PLM). In both GaAs and GaP wafers, N was implanted to form a 100 nm thick layer on top with an atomic concentration of about 1 %. After implantation, within the as-implanted range, both GaAs and GaP become amorphous. Post-implantation thermal treatment (FLA for GaAs:N and PLM for GaP:N) leads to the recrystallization of GaAs and GaP, as well as the incorporation of the N atoms into the lattice effectively, which is confirmed by micro-Raman and photoluminescence studies. The results show that about 40 % of the implanted N atoms are successfully incorporated into the lattice. According to our investigation, ion-implantation followed by ultrashort thermal treatment, which is quite efficient and low-cost, exhibits a promising prospect on bandgap engineering of semiconductors.