Regensburg 2013 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 4: III-V semiconductors: mainly wells and surfaces
HL 4.8: Talk
Monday, March 11, 2013, 11:30–11:45, H15
Indirect Excitons transport and manipulation in Double Quantum Wells — •Adriano Violante1, Snežana Lazić2, Klaus Biermann1, Rudolph Hey1, Paulo Santos1, Kobi Kohen3, and Ronen Rapaport3 — 1Paul-Drude-Institut für Festkörperelektronik, Berlin, Germany — 2Departamento de Física de Materiales, Universidad Autónoma de Madrid, Madrid, Spain — 3Racah Institute of Physics, Hebrew University of Jerusalem, Jerusalem, Israel
A spatially indirect exciton (IX) is a bound state of an electron and a hole localized in different quantum wells of a double quantum well structure. Due to their long lifetimes and strong non-linear properties arising from dipole-dipole interactions IXs are particularly interesting for applications in optoelectronic devices [1]. In this contribution, we demonstrate that a high degree of control of IX fluids can be obtained by combining their manipulation via electrostatic gates with the long - range IX transport achieved by Surface Acoustic Waves (SAW). The moving type-I band-gap modulation induced by the SAW strain field traps and transports the long-living IXs [2]. The spatial and energetic distributions of IXs are investigated using spatially and spectrally resolved photoluminescence. In addition, time resolved techniques are used to study the space and temporal dynamics of the IXs packets transported by SAW.
[1] A. A. High et al., Science 321, 229-231 (2008)
[2] J. Rudolph, R. Hey and P. V Santos, Phys. Rev. Lett. 99, 047602[4] (2007)