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HL: Fachverband Halbleiterphysik
HL 41: Quantum dots and wires: Preparation and characterization
HL 41.1: Vortrag
Dienstag, 12. März 2013, 11:15–11:30, H15
Towards III-V semiconductor nanowire field effect transistors: Atomic layer deposition of Al2O3 on InAs nanowires — •Torsten Jörres1,2, Torsten Rieger1,2, Detlev Grützmacher1,2, and Mihail Ion Lepsa1,2 — 1Peter Grünberg Institut - 9, Forschungszentrum Jülich, 52425 Jülich, Germany — 2JARA-Fundamentals of Future Information Technology
Nanowire field effect transistors require thin gate dielectric films with a low density of interface states. Here, the use of Al2O3 prepared by atomic layer deposition (ALD) is promising due to a self-cleaning mechanism resulting in a reduction of the native oxides and a good thickness control. In this presentation, we demonstrate the processing of InAs nanowires covered homogeneously by amorphous Al2O3. The InAs nanowires are grown by a vapour-solid mechanism in a molecular beam epitaxy system. The Al2O3 is deposited ex-situ in the ALD machine. Trimethylaluminum and ozone are used as precursors. In advance, deposition experiments on silicon substrates were performed to optimise the Al2O3 layer using XRR, ellipsometry and CV measurements for characterisation. High resolution transmission electron microscopy investigations on nanowires covered with Al2O3 show the high uniformity of the deposition process even for high nanowire density. Further on, we demonstrate a process for contacting single nanowires with source, drain and gate contacts using only one metallization step. Preliminary DC measurement results on processed devices are presented and discussed.