HL 41: Quantum dots and wires: Preparation and characterization
Tuesday, March 12, 2013, 11:15–12:45, H15
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11:15 |
HL 41.1 |
Towards III-V semiconductor nanowire field effect transistors: Atomic layer deposition of Al2O3 on InAs nanowires — •Torsten Jörres, Torsten Rieger, Detlev Grützmacher, and Mihail Ion Lepsa
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11:30 |
HL 41.2 |
Different Approaches for Uncovering InAs/AlAs Quantum Dots — •Evgeniya Sheremet, Raul D. Rodriguez, Torsten Jagemann, Wolfgang Grünewald, Doreen Dentel, Alexander Toropov, Alexander Milekhin, and Dietrich R.T. Zahn
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11:45 |
HL 41.3 |
MOVPE growth of InGaAs quantum dots on GaP for nanomemory cells — •Gernot Stracke, Bertram Jaeger, Tobias Nowozin, Leo Bonato, Sven Rodt, Andrei Schliwa, Andre Strittmatter, Christopher Prohl, Andrea Lenz, Holger Eisele, Udo W. Pohl, and Dieter Bimberg
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12:00 |
HL 41.4 |
High density (Ga,In)As/GaP self-assembled quantum dots — •Matthias Heidemann, Sven Höfling, and Martin Kamp
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12:15 |
HL 41.5 |
Whispering gallery modes in zinc-blende AlN microdisks embedded with cubic GaN quantum dots — •Matthias Bürger, Marcel Ruth, Stefan Declair, Cedrik Meier, Jens Förstner, and Donat Josef As
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12:30 |
HL 41.6 |
Confinement enhancement in InGaN quantum dots by AlGaN barriers — •Carsten Laurus, Timo Aschenbrenner, Stephan Figge, Marco Schowalter, Andreas Rosenauer, and Detlef Hommel
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