Regensburg 2013 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 44: Photonic crystals

HL 44.3: Vortrag

Dienstag, 12. März 2013, 15:30–15:45, H3

Fabrication of GaN photonic crystals using Surface Charge Lithography — •Olesea Volciuc¹, Timo Aschenbrenner², Detlef Hommel², Ion Tiginyanu³, and Jürgen Gutowski¹ — ¹Institude of Solid State Physics, Semiconductor Optics, University of Bremen, 28334 Bremen — ²Institude of Solid State Physics, Semiconductor Epitaxy, University of Bremen, 28334 Bremen — ³National Center for Material Study and Testing, Technical University of Moldova, 2004 Chisinau

Two-dimensional photonic crystal (2D PhC) structures/slabs based on GaN have been fabricated by a maskless technological approach known as Surface Charge Lithography (SCL). The fabrication and processing techniques of PhCs require both high lithographic resolution and smooth etching of surfaces. The quality demand for spatial resolution is usually achieved by e-beam lithography and reactive ion etching (RIE). However, dry etching gives rise to damaged surfaces which are detrimental to the performance of optoelectronic devices. In addition, e-beam lithography and dry etching techniques involve complex and expensive equipment. SCL is an attractive alternative which avoids the problem of pronounced surface damage and represents an efficient and cost-effective fabrication procedure. This approach is based on a photoelectrochemical etching (PEC) of samples preliminarily treated by low-fluence focused ion beam (FIB). Results concerning the spatial nanoarchitecture of such developed 2D PhCs are presented.