Regensburg 2013 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 46: III-V semiconductors: mainly wires and dots
HL 46.2: Talk
Tuesday, March 12, 2013, 15:15–15:30, H15
Epitaxial Grown InP Quantum Dots on a GaAs Buffer Realized on GaP/Si(001) Templates — •Walter Hartwig, Michael Wiesner, Elisabeth Koroknay, Matthias Paul, Michael Jetter, and Peter Michler — Institut für Halbleiteroptik und Funktionelle Grenzflächen and Research Center SCoPE, Universität Stuttgart, Allmandring 3, 70569 Stuttgart, Germany
The increasing necessity of higher computational capacity and security in the information technology requires originally technical solutions, which today’s standard microelectronics, as their technical limits are close, can’t provide anymore. One way out offers the integration of III-V semiconductor photonics with low-dimensional structures in current CMOS technology, enabling on-chip quantum optical applications, like quantum cryptography or quantum computing. Challenges in the heteroepitaxy of III-V semiconductors and silicon are the mismatches in material properties of the both systems. Defects, like dislocations and anti-phase domains (APDs), inhibit the monolithic integration of III-V semiconductor on Si. We present the growth of a thin GaAs buffer on CMOS-compatible oriented Si(001) by metal-organic vapor-phase epitaxy. To circumvent the forming APDs in the GaAs buffer a GaP on Si template (provided by NAsPIII/V GmbH) was used. The dislocation density was then reduced by integrating several layers of InAs quantum dots in the GaAs buffer to bend the threading misfit dislocations. On top of this structure we grew InP quantum dots embedded in a AlxGa1−xInP composition and investigated the photoluminescence properties.