Regensburg 2013 – scientific programme
Parts | Days | Selection | Search | Updates | Downloads | Help
HL: Fachverband Halbleiterphysik
HL 48: Topological insulators (HL, jointly with O, TT)
HL 48.14: Talk
Wednesday, March 13, 2013, 12:45–13:00, H16
Fabrication and characterization of thin Bi2Se3 topological insulators — •Srujana Dusari1, Philipp Meixner1, Anna Mogilatenko2, Saskia F. Fischer1, Jaime Sanchez-Barriga3, Lada V. Yashina4, Florian Kronast3, Sergio Valencia3, Akin Ünal3, and Oliver Rader3 — 1Novel Materials, Humboldt Universität zu Berlin, D-12489 Berlin — 2Ferdinand Braun Institut, D-12489 Berlin — 3Helmholtz-Zentrum Berlin für Materialien und Energie, D-12489 Berlin — 4Dep. Chemistry, Moscow State University, Russia
Topological insulators (TIs) have electrically insulating states in the bulk and robust conducting states along the edges [1, 2]. The real-life TI samples available today contain residual bulk charge carriers that hinder exploiting their surface properties in device form. The aim of our work is to investigate the controlled combination of dimensionality and designed impurity and metallic defect structures on the quantum transport properties of well known Bi2Se3 TIs, in particular with respect to the implications for devices. Here we report preparation and characterization of exfoliated Bi2Se3 flakes. The samples are characterized using atomic force microscopy, transmission electron microscopy, and energy-dispersive X-ray spectroscopy. Surface stability and composition are determined using photoemission electron microscopy. Low temperature transport measurements are presented.
[1] C. L. Kane, and E. J. Mele, Phys. Rev. Lett. 95, 226801 (2005).
[2] M. Z. Hasan and J. E. Moore, Annu. Rev. Condens. Matter. Phys. 2: 55-78 (2011).