Regensburg 2013 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 5: Spintronics: mainly interfaces and heterostructures
HL 5.2: Talk
Monday, March 11, 2013, 09:45–10:00, H16
Anisotropy at the Fe/GaAs(001) interface - resistance and AMR-effect — •Thomas Hupfauer1, Alex Matos-Abiague2, Bernhard Endres1, Matthias Sperl1, Georg Woltersdorf1, Martin Utz1, Dieter Schuh1, Dominique Bougeard1, Christian Back1, Jaroslav Fabian2, and Dieter Weiss1 — 1Institute of Experimental and Applied Physics, University of Regensburg, 93040 Regensburg, Germany — 2Institute of Theoretical Physics, University of Regensburg, 93040 Regensburg, Germany
We investigate transport anisotropies at Fe/GaAs interfaces. These experiments were motivated by theoretical calculations derived from a spin-orbit-field model for the TAMR-effect [1,2] which was applied to the case of lateral transport. Samples with an epitaxially grown Fe-layer consisting of six monolayers were investigated. The measurements show an anisotropy of the conductance dependent on the crystallographic axes of the GaAs, featuring a maximum along the [110]-direction and a minimum in [110]. Additionally the strength of the AMR-effect is also dependent on the crystallographic axes, showing maxima in both [110]- and [110]-directions, with the maximum in [110] being somewhat larger. This behavior could be reproduced by the theoretical model. Financial support by DFG via SFB 689 is gratefully acknowledged.
[1] M. Wimmer, et al., Phys. Rev. B 80, 121301(R) (2009)
[2] J. Moser, et al., Phys. Rev. Lett. 99, 056601 (2007)