Regensburg 2013 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 5: Spintronics: mainly interfaces and heterostructures

HL 5.4: Vortrag

Montag, 11. März 2013, 10:15–10:30, H16

Spin storage and readout in charge-tunable structures with InGaAs quantum dots — •Andreas Merz, Helge Wurst, Franziska Reiter, Arne Ludwig, Andreas Wieck, Michael Hetterich, and Heinz Kalt — KIT, Karlsruhe, Germany

To enable electron spin manipulation in semiconductor quantum dots (QDs), the control over the lifetime of the created excitonic species in the QD is indispensable. For Schottky diode-like structures this can be obtained with charge tuning via top and back contact. The applied voltage controls electron and hole tunneling rates, enabling carrier separation and subsequent storage of spin-polarized carriers in the microsecond regime [1]. This is a promising scenario for coherent microwave spin manipulation with optically detected magnetic resonance experiments to enable spin manipulation in QDs. Since the optical injection and readout of the spin states in these devices is well-controlled, this would enable the last but most important step towards an application of single QDs as spin memory devices. [1] Carrier storage and capture dynamics on quantum-dot heterostructures. J.M. Smith, P. A. Dalgarno, R.J. Warburton et al., Appl. Phys. Lett. 82, 21 (2003).