Regensburg 2013 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 5: Spintronics: mainly interfaces and heterostructures
HL 5.8: Talk
Monday, March 11, 2013, 11:15–11:30, H16
Spin injection and spin relaxation: Magnetic field effects — •Henning Höpfner1, Carola Fritsche1, Arne Ludwig2, Astrid Ludwig2, Frank Stromberg3, Heiko Wende3, Werner Keune3, Dirk Reuter2, Andreas D. Wieck2, Nils C. Gerhardt1, and Martin R. Hofmann1 — 1Photonik und Terahertztechnologie, Ruhr-Universität Bochum, D-44780 Bochum — 2Angewandte Festkörperphysik, Ruhr-Universität Bochum, D-44780 Bochum — 3Fakultät für Physik und CENIDE, Universität Duisburg-Essen, D-47048 Duisburg
In the last two decades, intensive research in the field of spintronics has led to remarkable progress of spintronic devices. Particularly electrical spin injection into semiconductors has provided a challenge to researchers around the world.
In magnetic remanence spin polarization of up to 3% could be achieved in spin-LEDs, while using external fields values up to 32% have been reached. We show experimentally that external magnetic fields strongly suppress spin relaxation during transport from the injector to the active region (APL 101, 112402 (2012)). Consequently, results obtained for spin injection with and without magnetic fields can hardly be compared and the efficiency of spin-induced effects will be overestimated as long as magnetic fields are applied. Since strong magnetic fields are not acceptable in application settings, this leads to wrong conclusions and potentially impairs proper device development.
Nevertheless, our results show that spin injection in magnetic remanence is possible and may provide a viable path to overcome the challenges at hand.