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HL: Fachverband Halbleiterphysik

HL 53: GaN: Devices

HL 53.1: Vortrag

Mittwoch, 13. März 2013, 10:00–10:15, H15

Magnetoresistance of GaN-based High Electron Mobility Transistors (HEMT) — •Sebastian Roensch¹, Victor Sizov², Takuma Yagi², Saad Murad², Lars Groh², Stephan Lutgen², Markus Sickmoeller², Michael Krieger¹, and Heiko B. Weber¹ — ¹University of Erlangen-Nuremberg, Erlangen, Germany — ²AZZURRO Semiconductors AG

GaN-based heterostructures are well-suited for the application in high-power electronics. In particular, epitaxially grown AlGaN/GaN heterojunctions can be utilised in high electron mobility transistors (HEMT) targeted on high-power application. The intrinsic material properties of AlGaN and GaN generate a two dimensional electron gas with a high electron mobility at the interface of the heterojunction. In order to gain a comprehensive understanding of the two dimensional electron gas we carried out temperature dependent magnetoresistance measurements in the temperature range from 1.5 K to 300 K. We report on quantum correction to the classical conductance, in particular weak localization, electron-electron-interaction, and Shubnikov-de Haas oscillations.