Regensburg 2013 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 53: GaN: Devices

HL 53.3: Talk

Wednesday, March 13, 2013, 10:30–10:45, H15

AlInN/GaN based FETs with 3DEGs — •Jonas Hennig, Oliver Krumm, Hartmut Witte, Jürgen Bläsing, Peter Veit, Annette Diez, Armin Dadgar, and Alois Krost — Institut für Experimentelle Physik, Otto-von Guericke-Universität Magdeburg, Universitätsplatz 2, 39106 Magdeburg

AlGaN/GaN heterostructures are the common active layer structure applied for FET devices. In contrast to AlGaN/GaN FETs a much higher conductivity can be achieved by AlInN/GaN. Common for both device types is high current operation, with higher values for AlInN/GaN, but a varying transconductance at different applied gate voltages originating in the 2DEG at the heterointerface. We have applied the concept of 3DEGs to AlInN/GaN FETs on Si to combine high conductivity with a plateau like transconductance behavior. To achieve this a GaN-AlGaN gradient was grown prior to the AlInN heterointerface. We will present calculations and first results on the structures and devices characterized by XRD, Hall-effect, C-V and I-V measurements.