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HL: Fachverband Halbleiterphysik
HL 53: GaN: Devices
HL 53.5: Vortrag
Mittwoch, 13. März 2013, 11:00–11:15, H15
Influence of waveguide layer composition and doping on the performance of blue-violet laser diodes — •Martin Martens1, Martin Frentrup1, Luca Redaelli2, Jöorg Jeschke2, Carsten Netzel2, Mark-Antonius Rothe1, Sven Einfeldt2, Jens Rass1, Tim Wernicke1, and Michael Kneissl1,2 — 1Technische Universität Berlin, Institut für Festkörperphysik, Hardenbergstr. 36, EW 6-1, 10623 Berlin — 2Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin
A crucial aspect about designing highly efficient laser diodes is the mode guiding structure surrounding the multiple quantum well (MQW) active region. In order to investigate the impact of composition and doping of the waveguiding layers (WG) on the laser threshold of the devices, we have fabricated broad area laser diodes emitting at around 410 nm with AlGaN cladding layers, InGaN/InGaN MQWs and different WG structures consisting of GaN and In0.02Ga0.98N layers grown by MOVPE on free standing (0001) GaN substrates. Vertical far-field measurements, electro- and photoluminescence measurements as well as device simulations were performed to investigate the effect of the WG design on the optical confinement, injection efficiency and internal quantum efficiency in the different device structures. The lowest threshold current density of 2.4 kA/cm2 was achieved with a symmetric InGaN WG and additional Si-doping in the lower WG.