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10:00 |
HL 53.1 |
Magnetoresistance of GaN-based High Electron Mobility Transistors (HEMT) — •Sebastian Roensch, Victor Sizov, Takuma Yagi, Saad Murad, Lars Groh, Stephan Lutgen, Markus Sickmoeller, Michael Krieger, and Heiko B. Weber
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10:15 |
HL 53.2 |
Strukturelle Charakterisierung von AlInN/AlN/GaN FET Strukturen — •Andreas Lesnik, Jürgen Bläsing, Jonas Hennig, Armin Dadgar und Alois Krost
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10:30 |
HL 53.3 |
AlInN/GaN based FETs with 3DEGs — •Jonas Hennig, Oliver Krumm, Hartmut Witte, Jürgen Bläsing, Peter Veit, Annette Diez, Armin Dadgar, and Alois Krost
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10:45 |
HL 53.4 |
Toward light-emitting diodes based on homogenous III-N nanowire ensembles on Si substrates — •Mattia Musolino, Christian Hauswald, Friederich Limbach, Martin Wölz, Tobias Gotschke, Oliver Brandt, Lutz Geelhaar, and Henning Riechert
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11:00 |
HL 53.5 |
Influence of waveguide layer composition and doping on the performance of blue-violet laser diodes — •Martin Martens, Martin Frentrup, Luca Redaelli, Jöorg Jeschke, Carsten Netzel, Mark-Antonius Rothe, Sven Einfeldt, Jens Rass, Tim Wernicke, and Michael Kneissl
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11:15 |
HL 53.6 |
Comparison of different carrier injection mechanisms in 290 nm LEDs — •C. Kuhn, F. Mehnke, T. Wernicke, J. Stellmach, T. Kolbe, C. Reich, M. Guttmann, V. Kueller, A. Knauer, M. Weyers, and M. Kneissl
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11:30 |
HL 53.7 |
Investigation of extraction efficiency and internal quantum efficiency of GaN-based LEDs — •Ailun Zhao, Uwe Rossow, Heiko Bremers, and Andreas Hangleiter
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