DPG Phi
Verhandlungen
Verhandlungen
DPG

Regensburg 2013 – scientific programme

Parts | Days | Selection | Search | Updates | Downloads | Help

HL: Fachverband Halbleiterphysik

HL 56: GaN: Optical characterization

HL 56.3: Talk

Wednesday, March 13, 2013, 12:30–12:45, H15

Temperature-dependent external quantum efficiencies of bulk ZnO and GaN — •Nils Rosemann1, Melanie Pinnisch2, Stefan Lautenschläger2, Martin Eickhoff2, Bruno K. Meyer2, and Sangam Chatterjee11Fachbereich Physik, Philipps-Universität Marburg, Renthof 5, D-35032 Marburg, Germany — 2I. Physikalisches Institut, Justus-Liebig-University Gießen, Heinrich Buff-Ring 16, 35392 Gießen, Germany

The most promising candidates for efficient solid-state UV-emitters today are probably those based on GaN. Nevertheless, ZnO has to be taken into account as an alternative material as these two materials share many physical properties such as large band-gap, exciton binding energies and a wurtzite crystal structure. However, both of them have their respective down-sides. In case of GaN the realization of high power devices remains the largest challenge, whereas ZnO still lacks the possibility of efficient and controllable p-type doping. To quantify the potential of both materials we investigate two series of GaN and ZnO bulk layers by temperature-dependent absolute photoluminescence spectroscopy using an integrating sphere mounted inside a cryostat. All samples show a strong decrease of the overall external quantum efficiency (EQE) with increasing temperature. Their differences only unveil in the spectral dependence of the EQE. For the GaN samples the EQE at room temperature is dominated by PL from deep defects while the ZnO is still dominated by near-edge emission.

100% | Mobile Layout | Deutsche Version | Contact/Imprint/Privacy
DPG-Physik > DPG-Verhandlungen > 2013 > Regensburg