Regensburg 2013 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 56: GaN: Optical characterization
HL 56.4: Vortrag
Mittwoch, 13. März 2013, 12:45–13:00, H15
Two-electron transition of excitons bound to neutral Si donors in homoepitaxial AlN — •Benjamin Neuschl1, Martin Feneberg2, Rüdiger Goldhahn2, Zhihong Yang3, Thomas Wunderer3, Jinqiao Xie4, Seiji Mita4, Rafael Dalmau4, Ramón Collazo5, Zlatko Sitar5, and Klaus Thonke1 — 1Institute of Quantum Matter / Group Semiconductor Physics, University of Ulm — 2Department of Experimental Physics / Material Physics, University of Magdeburg — 3Palo Alto Research Center Inc., Palo Alto, USA — 4HexaTech Inc., Morrisville, USA — 5Department of Materials Science and Engineering, North Carolina State University, Raleigh, USA
We successfully detected the contribution of two-electron transitions of excitons bound to neutral silicon donors to the emission spectra of aluminum nitride. The sample under investigation was grown homoepitaxially by MOCVD on PVT grown bulk aluminum nitride substrate. Its outstanding crystal quality allows for a very detailed analysis by low-temperature photoluminescence spectroscopy with excellent spectral resolution. For a multitude of excitation spots, we correlated the emission intensities of all luminescence bands in the bandedge region. We found a clear dependency of one single band on the emission of excitons bound to neutral silicon. Temperature dependent studies on the according emission bands confirmed our interpretation of a two-electron transition. This allows for a direct calculation of the donor binding energy of silicon in aluminum nitride.