Regensburg 2013 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
HL: Fachverband Halbleiterphysik
HL 57: Spintronics/Quantum information: Materials and methods (HL, jointly with TT)
HL 57.7: Vortrag
Mittwoch, 13. März 2013, 16:30–16:45, H2
Electron spin-flip Raman scattering in a CdTe/(Cd,Mg)Te quantum well — •Dion Braukmann1, J. Debus1, D. Dunker1, V. F. Sapega2, D. R. Yakovlev1,2, G. Karczewski3, T. Wojtowicz3, J. Kossut3, and M. Bayer1 — 1Experimentelle Physik 2, Technische Universität Dortmund, 44227 Dortmund, Germany — 2Ioffe Physical-Technical Institute, Russian Academy of Science, 194021 St. Petersburg, Russia — 3Institute of Physics, Polish Academy of Sciences, 02668 Warsaw, Poland
The Raman scattering of the electron spin in a neutral exciton has been studied in a CdTe/(Cd,Mg)Te quantum well (QW). The mechanism of the electron spin-flip Raman scattering (SFRS) is experimentally evaluated from the circular polarization properties of the scattered light as well as dependence of the electron-SFRS line intensity on the magnetic field direction with respect to the QW growth axis. The spin-flip process is governed by acoustic phonon interaction and anisotropic electron-heavy-hole exchange interaction. The probability of the anisotropic exchange interaction depends on the g factors of the involved carriers. It shows a strong angular dependence due to the anisotropic heavy-hole g factor. Moreover, by application of above-barrier illumination in addition to the resonant excitation of the neutral QW excitons the intensity of the electron-SFRS line can be modulated significantly.