Regensburg 2013 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 59: Goup IV elements and their compounds I

HL 59.2: Talk

Wednesday, March 13, 2013, 15:15–15:30, H15

Photo-induced microwave emission of silicon vacancy defects in silicon carbide — •Stefan Väth¹, Daniel Riedel¹, Hannes Kraus¹, Franziska Fuchs¹, Andreas Sperlich¹, Vladimir Dyakonov^1,2, Victor Soltamov³, Vladimir Ilyin⁴, Pavel Baranov³, and Georgy Astakhov¹ — ¹Experimental Physics VI, Julius Maximilian University of Würzburg, 97074 Würzburg — ²ZAE Bayern, 97074 Würzburg — ³Ioffe Physical-Technical Institute, St. Petersburg, RU-194021 Russia — ⁴Saint Petersburg Electrotechnical University, St. Petersburg, RU-194021 Russia

Silicon vacancy defects in silicon carbide are a very promising candidate for a wide range of applications in quantum information processing, photonics and magnetometry. [1]
We have reconstructed the spin structure of silicon vacancy defects using the optically detected magnetic resonance (ODMR) technique. In particular, we have observed multi-quantum spin resonances, unambiguously indicating the high-spin ground state of these defects with S=3/2, terminating an ongoing discussion about a triplet or quartet ground state. This ground state is energetically split due to the crystal field even without external magnetic field, and we were able to create an inverse population using optical spin pumping. This opens intriguing perspectives for the realization of tunable microwave amplification by stimulated emission of radiation (MASER) in a solid-state system.
[1] D. Riedel et al., Physical Review Letters 109, 226402 (2012)