Regensburg 2013 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 59: Goup IV elements and their compounds I
HL 59.4: Talk
Wednesday, March 13, 2013, 15:45–16:00, H15
Formation of magnetic moments induced by annealing in epitaxial graphene on SiC detected by spin precession measurements — •Bastian Birkner1, Daniel Pachniowski1, Andreas Sandner1, Markus Ostler2, Thomas Seyller2, Jaroslav Fabian3, Mariusz Ciorga1, Dieter Weiss1, and Jonathan Eroms1 — 1Institute for Experimental and Applied Physics, University of Regensburg, 93040 Regensburg, Germany — 2Lehrstuhl für Technische Physik, University of Erlangen-Nürnberg, 91058 Erlangen, Germany — 3Institute for Theoretical Physics, University of Regensburg, 93040 Regensburg, Germany
We present results of non-local and three terminal spin precession measurements on spin injection devices fabricated on epitaxial graphene on SiC. The measurements were performed before and after an annealing step at 150 ∘C for 15 minutes in vacuum. The values of spin relaxation length Ls and spin relaxation time τs obtained after annealing are reduced by a factor 2 and 4, respectively, compared to those before annealing. An apparent discrepancy between spin diffusion constant Ds and charge diffusion constant Dc can be resolved by investigating the temperature dependence of the effective g-factor, which is consistent with a model for paramagnetic magnetic moments.