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09:30 |
HL 5.1 |
Spin Transport and Spin Dephasing in ZnO — Matthias Althammer, Eva-Maria Karrer-Müller, Sebastian T. B. Goennenwein, •Matthias Opel, and Rudolf Gross
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09:45 |
HL 5.2 |
Anisotropy at the Fe/GaAs(001) interface - resistance and AMR-effect — •Thomas Hupfauer, Alex Matos-Abiague, Bernhard Endres, Matthias Sperl, Georg Woltersdorf, Martin Utz, Dieter Schuh, Dominique Bougeard, Christian Back, Jaroslav Fabian, and Dieter Weiss
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10:00 |
HL 5.3 |
Anisotropic Thermal Transport Through Magnetic Tunnel Junctions — •Carlos López-Monís, Alex Matos-Abiague, and Jaroslav Fabian
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10:15 |
HL 5.4 |
Spin storage and readout in charge-tunable structures with InGaAs quantum dots — •Andreas Merz, Helge Wurst, Franziska Reiter, Arne Ludwig, Andreas Wieck, Michael Hetterich, and Heinz Kalt
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10:30 |
HL 5.5 |
Hole spin coherence in coupled GaAs/AlAs quantum wells — •Christian Gradl, Michael Kugler, Dieter Schuh, Dominique Bougeard, Christian Schüller, and Tobias Korn
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10:45 |
HL 5.6 |
Electric suppression of spin dephasing in GaAs (111) quantum wells — •Alberto Hernandez-Minguez, Klaus Biermann, Rudolph Hey, and Paulo V. Santos
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11:00 |
HL 5.7 |
Spin injection into semiconductor 2D systems — •Martin Oltscher, Mariusz Ciorga, Josef Loher, Dieter Schuh, Dominique Bougeard, and Dieter Weiss
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11:15 |
HL 5.8 |
Spin injection and spin relaxation: Magnetic field effects — •Henning Höpfner, Carola Fritsche, Arne Ludwig, Astrid Ludwig, Frank Stromberg, Heiko Wende, Werner Keune, Dirk Reuter, Andreas D. Wieck, Nils C. Gerhardt, and Martin R. Hofmann
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11:30 |
HL 5.9 |
Low Temperature Spin Relaxation Rate Anisotropy in (001) GaAs/AlGaAs Quantum Wells — •David English, Peter Eldridge, Richard Harley, Roland Winkler, Jens Hübner, and Michael Oestreich
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