Regensburg 2013 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 62: Graphene: SiC substrates and intercalation (O, jointly with HL, TT)

HL 62.12: Vortrag

Mittwoch, 13. März 2013, 18:45–19:00, H17

Deuteration kinetics of the graphene — •Alexei Nefedov¹, Alessio Paris², Nikolay Verbitskiy^3,11, Ying Wang⁴, Alexander Fedorov^5,6, Danny Haberer⁵, Martin Oetzelt⁷, Luca Petaccia⁸, Dmitry Usachov⁶, Denis Vyalikh^6,9, Hermann Sagdev¹⁰, Christof Woell¹, Martin Knupfer⁵, Berndt Buechner⁵, Lucia Calliari², Lada Yashina³, Stephan Irle⁴, and Alexander Grüneis^5,11 — ¹KIT, Leopoldshafen, Germany — ²FBK-CMM, Trento, Italy — ³MSU, Moscow, Russia — ⁴Nagoya University, Nagoya, Japan — ⁵IFW Dresden, Dresden, Germany — ⁶St. Petersburg University, St. Petersburg, Russia — ⁷BESSY II, Berlin, Germany — ⁸Elettra, Trieste, Italy — ⁹TU Dresden, Dresden, Germany — ¹⁰MPI für Polymerforschung, Mainz, Germany — ¹¹University of Vienna, Vienna, Austria

The kinetics of the hydrogenation/deuteration reaction of graphene was studied by time-dependent x-ray photoemission spectroscopy (XPS). The graphene layer was then exposed to hydrogen or deuterium atomic gas beams, obtained by thermal cracking in a tungsten capillary at T=3000 K. After each step XPS of the C1s line was performed in order to measure H/C and D/C ratios. We have observed a strong kinetic isotope effect for the hydrogenation/deuteration reaction leading to substantially faster adsorption and higher maximum D/C ratios as compared to H/C (D/C~35% vs. H/C~25%).